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Datasheet OP249 (Analog Devices) - 9

ПроизводительAnalog Devices
ОписаниеPrecision JFET High Speed Dual Op Amp
Страниц / Страница11 / 9 — STANDARD. 5962-91519. MICROCIRCUIT DRAWING
Формат / Размер файлаPDF / 116 Кб
Язык документаанглийский

STANDARD. 5962-91519. MICROCIRCUIT DRAWING

STANDARD 5962-91519 MICROCIRCUIT DRAWING

28 предложений от 19 поставщиков
Микроконтроллер широкого назначения ARM Cortex M3 MCU 72МГц, 64кб Flash, 20кб ОЗУ, SPI, I2C, 3xUSART, USB, CAN, 3x16бит таймера, 37 I/O,...
Контест
Россия
С2-33Н-0.125-62К 10%
1.15 ₽
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BLM15HB121SN1D
Murata
3.00 ₽
Десси
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Операционный усилитель OPA2348AIDR SMD
Texas Instruments
151 ₽
OP249AZ208
Analog Devices
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Текстовая версия документа

TABLE II. Electrical test requirements. Test requirements Subgroups Subgroups (in accordance with (in accordance with MIL-STD-883, MIL-PRF-38535, table III) method 5005, table I) Device Device Device class M class Q class V Interim electrical 1 1 1 parameters (see 4.2) Final electrical 1,2,3,4,5,6 1/ 1,2,3,4,5,6 1/ 1,2,3, 1/ parameters (see 4.2) 4,5,6 Group A test 1,2,3,4,5,6,7,8,9 1,2,3,4,5,6, 1,2,3,4,5,6, requirements (see 4.4) 7,8,9 7,8,9 Group C end-point electrical 1 1 1 parameters (see 4.4) Group D end-point electrical 1 1 1 parameters (see 4.4) Group E end-point electrical --- --- --- parameters (see 4.4) 1/ PDA applies to subgroup 1. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. b. TA = +125°C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table II herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in table II herein.
STANDARD
SIZE
5962-91519 MICROCIRCUIT DRAWING A
DLA LAND AND MARITIME REVISION LEVEL SHEET COLUMBUS, OHIO 43218-3990 E 9 DSCC FORM 2234 APR 97 Document Outline DEPARTMENT OF DEFENSE SPECIFICATION DEPARTMENT OF DEFENSE STANDARDS
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