Datasheet BC560C (ON Semiconductor)

BC560C Low Noise Transistors
PNP Silicon Features
• These are Pb−Free Devices*
http://onsemi.com
COLLECTOR 1
MAXIMUM RATINGS Rating Symbol Value Unit
2 Collector−Emitter Voltage VCEO −45 Vdc BASE Collector−Base Voltage VCBO −50 Vdc Emitter−Base Voltage V 3 EBO −5.0 Vdc EMITTER Collector Current − Continuous IC −100 mAdc Total Power Dissipation @ TA = 25°C PD 625 mW Derate above TA = 25°C 5.0 mW/°C Total Power Dissipation @ TA = 25°C PD 1.5 W
TO−92
Derate above TA = 25°C 12 mW/°C
CASE 29
Operating and Storage Junction T
STYLE 17
J, Tstg −55 to +150 °C Temperature Range 1
THERMAL CHARACTERISTICS
1 2 2 3 3
Characteristic Symbol Max Unit
STRAIGHT LEAD BENT LEAD Thermal Resistance, Junction−to−Ambient R BULK PACK TAPE & REEL qJA 200 °C/W AMMO PACK Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended
MARKING DIAGRAM
Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BC56 0C AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION Device Package Shipping
BC560CG TO−92 5000 Units / Bulk (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please BC560CZL1G TO−92 2000 / Ammo Pack download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free) Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012 − Rev. 4 BC560C/D