Datasheet 2N5457, 2N5458 (ON Semiconductor) - 2

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2N5457, 2N5458 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Gate −Source Breakdown Voltage V(BR)GSS (IG = −10 mAdc, VDS = 0) −25 − − Vdc Gate Reverse Current IGSS (VGS = −15 Vdc, VDS = 0) − − -1.0 nAdc (VGS = −15 Vdc, VDS = 0, TA = 100°C) − − −200 Gate−Source Cutoff Voltage 2N5457 VGS(off) −0.5 − −6.0 Vdc (VDS = 15 Vdc, iD = 10 nAdc) 2N5458 −1.0 − −7.0 Gate−Source Voltage VGS (VDS = 15 Vdc, iD = 100 mAdc) 2N5457 − −2.5 − Vdc (VDS = 15 Vdc, iD = 200 mAdc) 2N5458 − −3.5 −
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (Note 1) 2N5457 IDSS 1.0 3.0 5.0 mAdc (VDS = 15 Vdc, VGS = 0) 2N5458 2.0 6.0 9.0
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance (Note 1) 2N5457 |Yfs| 1000 3000 5000 mmhos (VDS = 15 Vdc, VGS = 0, f = 1 kHz) 2N5458 1500 4000 5500 Output Admittance Common Source (Note 1) |Yos| (VDS = 15 Vdc, VGS = 0, f = 1 kHz) − 10 50 mmhos Input Capacitance Ciss (VDS = 15 Vdc, VGS = 0, f = 1 kHz) − 4.5 7.0 pF Reverse Transfer Capacitance Crss (VDS = 15 Vdc, VGS = 0, f = 1 kHz) − 1.5 3.0 pF 1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
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