NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A MBB274 MBB275 1 6 handbook, halfpage handbook, halfpage Cc (pF) f T 0.8 (GHz) 4 0.6 0.4 2 0.2 0 0 0 5 10 15 20 0 10 20 30 VCB (V) I (mA) C IC = ic = 0; f = 1 MHz; Tj = 25 °C. VCE = 10 V; f = 500 MHz; Tamb = 25 °C. Fig.5 Collector capacitance as a function of Fig.6 Transition frequency as a function of collector-base voltage; typical values. collector current; typical values. MBB278 MBB279 30 30 handbook, halfpage handbook, halfpage gain gain (dB) (dB) MSG 20 20 MSG GUM GUM 10 10 0 0 0 5 10 15 20 25 0 5 10 15 20 25 IC (mA) I (mA) C VCE = 10 V; f = 500 MHz. VCE = 10 V; f = 1 GHz. MSG = maximum stable gain; MSG = maximum stable gain; GUM = maximum unilateral power gain. GUM = maximum unilateral power gain. Fig.7 Gain as a function of collector current; Fig.8 Gain as a function of collector current; typical values. typical values. Rev. 04 - 2 March 2009 5 of 12 Document Outline FEATURES DESCRIPTION APPLICATIONS PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history
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