NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A MCD081 MCD082 4 4 handbook, halfpage handbook, halfpage f = 2 GHz I = 15 mA C F F (dB) (dB) 10 mA 3 3 5 mA 1 GHz 500 MHz 2 2 1 1 0 0 1 10 10 2 I (mA) 10 4 10 3 10 2 C f (MHz) VCE = 10 V. VCE = 10 V. Fig.13 Minimum noise figure as a function of Fig.14 Minimum noise figure as a function of collector current; typical values. frequency; typical values. MBB282 MBB283 −45 −35 handbook, halfpage handbook, halfpage d im d 2 (dB) (dB) −50 −40 −55 −45 −60 −50 −65 −55 −70 −60 10 20 30 10 20 30 I (mA) C I (mA) C VCE = 10 V; VO = 150 mV (43.5 dBmV); fp + fq−fr = 793.25 MHz; Tamb = 25 °C. VCE = 10 V; VO = 60 mV; fp + fq−fr = 810 MHz; Tamb = 25 °C. Measured in MATV test circuit (see Fig.2). Measured in MATV test circuit (see Fig.2). Fig.15 Intermodulation distortion; Fig.16 Second order intermodulation distortion; typical values. typical values. Rev. 04 - 2 March 2009 7 of 12 Document Outline FEATURES DESCRIPTION APPLICATIONS PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history
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