Datasheet MC74VHC1GT50 (ON Semiconductor) - 2

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MC74VHC1GT50 MAXIMUM RATINGS Symbol Characteristics Value Unit
VCC DC Supply Voltage −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V VOUT DC Output Voltage VCC = 0 −0.5 to 7.0 V High or Low State −0.5 to VCC + 0.5 IIK Input Diode Current −20 mA IOK Output Diode Current VOUT < GND; VOUT > VCC +20 mA IOUT DC Output Current, per Pin +25 mA ICC DC Supply Current, VCC and GND +50 mA PD Power dissipation in still air SC−88A, TSOP−5 200 mW qJA Thermal resistance SC−88A, TSOP−5 333 °C/W TL Lead temperature, 1 mm from case for 10 secs 260 °C TJ Junction temperature under bias +150 °C Tstg Storage temperature −65 to +150 °C VESD ESD Withstand Voltage Human Body Model (Note 1) > 2000 V Machine Model (Note 2) > 200 Charged Device Model (Note 3) N/A ILatchup Latchup Performance Above VCC and Below GND at 125°C (Note 4) ±500 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Tested to EIA/JESD22−A114−A 2. Tested to EIA/JESD22−A115−A 3. Tested to JESD22−C101−A 4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit
VCC DC Supply Voltage 1.65 5.5 V VIN DC Input Voltage 0.0 5.5 V VOUT DC Output Voltage VCC = 0 0.0 5.5 V High or Low State 0.0 VCC TA Operating Temperature Range −55 +125 °C tr , tf Input Rise and Fall Time VCC = 3.3 V ± 0.3 V 0 100 ns/V VCC = 5.0 V ± 0.5 V 0 20
Device Junction Temperature versus Time to 0.1% Bond Failures Junction
TE FAILURE RATE OF PLASTIC = CERAMIC
Temperature
°
C Time, Hours Time, Years
UNTIL INTERMETALLICS OCCUR 80 1,032,200 117.8 C C C C ° ° ° ° C C ° ° AILURE RA 10 90 419,300 47.9 = 130 = 120 = 1 = 100 = 90 = 80 T J T J T J T J T J T J 100 178,700 20.4 1 110 79,600 9.4 NORMALIZED F 120 37,000 4.2 1 10 100 1000 130 17,800 2.0 TIME, YEARS 140 8,900 1.0
Figure 3. Failure Rate vs. Time Junction Temperature www.onsemi.com 2