MBRF2035 - MBRF20100 Taiwan Semiconductor CREAT BY ART FIG. 5 TYPICAL JUNCTION CAPACITANCE FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG PER LEG 10000 100 f=1.0MHz Vsig=50mVp-p A (pF) L ) E A 10 C M /W MBRF2035-2060 ER °C ITAN 1000 E ( T TH C N A APAC SIEN 1 C PED AN IM TION MBRF2090-20100 TR C N JU 100 0.1 0.1 1 10 100 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) T-PULSE DURATION(s) PACKAGE OUTLINE DIMENSIONSITO-220ACUnit (mm)Unit (inch)DIM.MinMaxMinMax A 4.30 4.70 0.169 0.185 B 2.50 3.10 0.098 0.122 C 2.30 2.90 0.091 0.114 D 0.46 0.76 0.018 0.030 E 6.30 6.90 0.248 0.272 F 9.60 10.30 0.378 0.406 G 3.00 3.40 0.118 0.134 H 0.00 1.60 0.000 0.063 I 0.95 1.45 0.037 0.057 J 0.50 0.90 0.020 0.035 K 2.40 3.20 0.094 0.126 L 14.80 15.50 0.583 0.610 M - 4.10 - 0.161 N - 1.80 - 0.071 O 12.60 13.80 0.496 0.543 P 4.95 5.20 0.195 0.205 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Version: J1512
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