Datasheet BC546, BC547, BC548, BC549, BC550 (ON Semiconductor) - 4

100 IB = 400μA
IB = 350μA
IB = 300μA 80 IB = 250μA 60 IB = 200μA
IB = 150μA 40 VCE = 5V IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT 100 IB = 100μA
20 10 1 IB = 50μA
0.1
0.0 0
0 2 4 6 8 10 12 14 16 18 20 0.2 0.4 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE hFE, DC CURRENT GAIN 1000 100 10 1
100 1.2 1000 10000 IC = 10 IB VBE(sat) 1000 100 VCE(sat) 10
1 IC[mA], COLLECTOR CURRENT 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage 100 1000 fT, CURRENT GAIN-BANDWIDTH PRODUCT Cob[pF], CAPACITANCE 1.0 Figure 2. Transfer Characteristic VCE = 5V 10 0.8 VBE[V], BASE-EMITTER VOLTAGE Figure 1. Static Characteristic 1 0.6 f=1MHz
IE = 0
10 1 0.1
1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE 100 10 1
0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 5. Output Capacitance © 2002 Fairchild Semiconductor Corporation
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 VCE = 5V Figure 6. Current Gain Bandwidth Product www.fairchildsemi.com
3 BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics