link to page 7 ADR280THEORY OF OPERATION The ADR280 provides the basic core 1.2 V band gap reference. V+ It contains two NPN transistors, Q9 and Q17, with their emitter R1R2R12 areas scaled in a fixed ratio. The difference in the VBE produces I1 a proportional to absolute temperature (PTAT) voltage that Q2Q1Q7 cancels the complementary to absolute temperature (CTAT) Q9 Q10 VBE voltage. As a result, a core band gap voltage that is almost a R3R4 constant 1.2 V over temperature is generated (see Figure 11). R13C1 Precision laser trimming of the internal resistors and other PNP3 proprietary circuit techniques are used to enhance the initial Q3R10 accuracy, temperature curvature, and temperature drift Q18Q17Q9 performance. Q6VOUTR7Q5R5R6R8R11R9 3 -01 5 V– 06 03 Figure 11. Simplified Architecture Rev. C | Page 7 of 12 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION LOW COST, LOW POWER CURRENT SOURCE Precision Low Power Current Source Boosted Current Source Negative Reference Boosted Reference with Scalable Output GSM and 3G Mobile Station Applications OUTLINE DIMENSIONS ORDERING GUIDE
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