Datasheet AD780 (Analog Devices) - 4

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AD780 Data Sheet ABSOLUTE MAXIMUM RATINGS 96 mils Table 2. GND TEMP +VIN Parameter Values
+VIN to Ground 36 V TRIM Pin to Ground 36 V TEMP Pin to Ground 36 V Power Dissipation (25°C) 500 mW Storage Temperature −65°C to +150°C
67 mils
Lead Temperature 300°C (Soldering 10 sec) Output Protection Output safe for indefinite short to
GND
ground and momentary short to VIN. ESD Classification Class 1 (1000 V) Stresses at or above those listed under Absolute Maximum 003 Ratings may cause permanent damage to the product. This is a
TRIM V 2.5V/3.0V OUT O/P SELECT
00841- stress rating only; functional operation of the product at these Figure 3. Die Layout or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond
NOTES
the maximum operating conditions for extended periods may Both VOUT pads must be connected to the output. affect product reliability. Die Thickness: The standard thickness of Analog Devices, Inc.
2.5V/3.0V O/PSELECT
bipolar dice is 10 mil ± 1 mil.
DNC 1 8 (DNC OR GND) +VIN 2 AD780 7 DNC
Die Dimensions: The dimensions given are the maximum possible
TEMP 3 TOP VIEW 6 VOUT
die size.
(Not to Scale) GND 4 5 TRIM
Backing: The standard backside surface is silicon (not plated). 002
NOTES
Analog Devices does not recommend gold-backed dice for most
1. DNC = DO NOT CONNECT TO THIS PIN.
00841- applications. Figure 2. Pin Configuration, 8-Lead PDIP and SOIC Packages Edges: A diamond saw is used to separate wafers into dice, thus
THERMAL RESISTANCE
providing perpendicular edges halfway through the die. In Thermal performance is directly linked to PCB design and contrast to scribed dice, this technique provides a more uniform operating environment. Careful attention to PCB thermal die shape and size. The perpendicular edges facilitate handling design is required. (such as tweezer pickup), while the uniform shape and size simplify substrate design and die attach.
Table 3. Thermal Resistance1 Package Type θ 2
Top Surface: The standard top surface of the die is covered by a
JA θJC Unit
N-8 49.8 37.4 °C/W layer of passivation. Al areas are covered except bonding pads R-8 160 36.8 °C/W and scribe lines. Surface Metallization: The metallization to Analog Devices 1 Values in Table 3 are calculated based on standard JEDEC test conditions unless otherwise specified. bipolar dice is aluminum/copper. The minimum thickness is 2 100um TIM is used for the θJC test. TIM is assumed to have 3.6 W/mK. 10,000 Å.
Table 4. Die Physical Characteristics
Bonding Pads: Al bonding pads have a minimum size of
Parameter Value Units
4.0 mil by 6.0 mil. The passivation windows have a minimum Die Size 67 × 96 mil size of 3.5 mil by 5.3 mil. Back Grind Thickness 10 mil
ESD CAUTION
Bond Pad Opening Size 89 × 136 µm Top Metal Composition AlCu (0.5%) % Passivation Oxynitride Polyimide None µm Die Marker 780 Substrate Bias GND V Rev. I | Page 4 of 12 Document Outline Features Functional Block Diagram General Description Product Highlights Table of Contents Revision History Specifications Absolute Maximum Ratings Thermal Resistance Notes ESD Caution Theory of Operation Applying the AD780 Noise Performance Noise Comparison Temperature Performance Temperature Output Pin Temperature Transducer Circuit Supply Current Over Temperature Turn-On Time Dynamic Performance Line Regulation Precision Reference for High Resolution 5 V Data Converters 4.5 V Reference from 5 V Supply Negative (–2.5 V) Reference Outline Dimensions Ordering Guide