Datasheet LTC4361-1, LTC4361-2 (Analog Devices) - 3

LTC4361-1/LTC4361-2
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 5V, VON = 0V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Supplies
VIN Input Voltage Range l 2.5 80 V VIN(UVL) Input Undervoltage Lockout VIN Rising l 1.8 2.1 2.47 V IIN Input Supply Current VON = 0V l 220 400 µA VON = 2.5V l 1.5 10 µA
Thresholds
VIN(OV) IN Pin Overvoltage Threshold VIN Rising l 5.684 5.8 5.916 V VIN(OVL) IN Pin Overvoltage Recovery Threshold VIN Falling l 5.51 5.7 5.85 V ∆VOV Overvoltage Hysteresis l 25 100 300 mV ∆VOC Overcurrent Threshold VIN – VSENSE l 45 50 55 mV
External Gate Drive
∆VGATE External N-Channel MOSFET Gate Drive 2.5V ≤ VIN < 3V, IGATE = –1µA l 3.5 4.5 6 V (VGATE – VOUT) 3V ≤ VIN < 5.5V, IGATE = –1µA l 4.5 6 7.9 V VGATE(TH) GATE High Threshold for PWRGD Status VIN = 3.3V l 5.7 6.3 6.8 V VIN = 5V l 6.7 7.2 7.8 V IGATE(UP) GATE Pull-Up Current VGATE = 1V l –4.5 –10 –15 µA VGATE(UP) GATE Ramp-Up VGATE = 1V to 7V l 1.3 3 4.5 V/ms IGATE(FST) GATE Pull-Down Current Fast Turn-Off, VIN = 6V, VGATE = 9V (C-, I-Grade) l 15 30 60 mA (H-Grade) l 12 30 60 mA IGATE(DN) GATE Pull-Down Current VON = 2.5V, VGATE = 9V l 5 40 80 µA
Input Pins
ISENSE(IN) SENSE Input Current VSENSE = 5V 10 nA IOUT(IN) OUT Input Current VOUT = 5V, VON = 0V l 5 10 20 µA VOUT = 5V, VON = 2.5V l 0 ±3 µA VON(TH) ON Input Threshold l 0.4 1.5 V ION ON Pull-Down Current VON = 2.5V l 2 5 10 µA
Output Pins
VGATEP(CLP) IN to GATEP Clamp Voltage VIN = 8V to 80V l 5 5.8 7.9 V RGATEP GATEP Resistive Pull-Down VGATEP = 3V l 0.6 2 3.2 MΩ VPWRGD(OL) PWRGD Output Low Voltage VIN = 5V, IPWRGD = 3mA (C-, I-Grade) l 0.23 0.4 V (H-Grade) l 0.23 0.5 V RPWRGD PWRGD Pull-Up Resistance to OUT VIN = 6.5V, VPWRGD = 1V l 220 500 800 kΩ
Delay
tON GATE On Delay VIN High to IGATE = –5µA l 50 130 219 ms tOFF GATE Off Propagation Delay VIN = Step 5V to 6.5V to PWRGD High l 0.25 1 µs VIN – VSENSE = Step 0mV to 100mV l 5 10 20 µs tPWRGD PWRGD Delay VIN = Step 5V to 6.5V l 0.25 1 µs VGATE > VGATE(TH) to PWRGD Low l 25 65 105 ms tON(OFF) ON High to GATE Off VON = Step 0V to 2.5V l 2 5 µs
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 2:
All currents into device pins are positive; all currents out of device may cause permanent damage to the device. Exposure to any Absolute pins are negative. All voltages are referenced to GND unless otherwise Maximum Rating condition for extended periods may affect device specified. reliability and lifetime.
Note 3:
An internal clamp limits VGATE to a minimum of 4.5V above VOUT. Driving this pin to voltages beyond this clamp may damage the device. Rev C For more information www.analog.com 3 Document Outline Features Applications Typical Application Description Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Revision History Typical Application Related Parts