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Datasheet LTC4012-3 (Analog Devices) - 4

ПроизводительAnalog Devices
ОписаниеHigh Efficiency, Multi-Chemistry Battery Charger with PowerPath Control
Страниц / Страница28 / 4 — The. denotes the specifications which apply over the full operating
Формат / Размер файлаPDF / 383 Кб
Язык документаанглийский

The. denotes the specifications which apply over the full operating

The denotes the specifications which apply over the full operating

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LTC4012-3 e lecTrical characTerisTics
The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. DCIN = 20V, BAT = 12V, GND = 0V unless otherwise noted. (Note 2) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS INTVDD Regulator
INTVDD Output Voltage No Load l 4.85 5 5.15 V ∆VDD Load Regulation IDD = 20mA –0.4 –1 % IDD Short-Circuit Current (Note 5) INTVDD = 0V 50 85 130 mA
Switching Regulator
VACP AC Present Charge Enable Threshold Voltage DCIN – BAT, DCIN Rising C-Grade l 350 500 650 mV I-Grade l 300 700 mV IITH ITH Current ITH = 1.4V –40/+90 µA fTYP Typical Switching Frequency 467 550 633 kHz fMIN Minimum Switching Frequency CLOAD = 3.3nF 20 25 kHz DCMAX Maximum Duty Cycle CLOAD = 3.3nF 98 99 % tR-TG TGATE Rise Time CLOAD = 3.3nF, 10% – 90% 60 110 ns tF-TG TGATE Fall Time CLOAD = 3.3nF, 90% – 10% 50 110 ns tR-BG BGATE Rise Time CLOAD = 3.3nF, 10% – 90% 60 110 ns tF-BG BGATE Fall Time CLOAD = 3.3nF, 90% – 10% 60 110 ns tNO TGATE, BGATE Non-Overlap Time CLOAD = 3.3nF, 10% – 10% 110 ns
PowerPath Control
IDCIN DCIN Input Current 0V ≤ DCIN ≤ CLP l –10 60 µA VFTO Forward Turn-On Voltage (DCIN Detection Threshold) DCIN-CLP, DCIN Rising l 15 60 mV VFR Forward Regulation Voltage DCIN-CLP l 15 25 35 mV VRTO Reverse Turn-Off Voltage DCIN-CLP, DCIN Falling l –45 –25 –15 mV VOL(INFET) INFET Output Low Voltage, Relative to CLP DCIN-CLP = 0.1V, IINFET =1µA –6.5 –5 V VOH(INFET) INFET Output High Voltage, Relative to CLP DCIN-CLP = –0.1V, IINFET =–5µA –250 250 mV tIF(ON) INFET Turn-On Time To CLP-INFET > 3V, CINFET = 1nF 85 180 µs tIF(OFF) INFET Turn-Off Time To CLP-INFET < 1.5V, CINFET = 1nF 2.5 6 µs
Indicator Outputs
VOL Output Voltage Low ILOAD = 100µA, PROG = 1.2V 500 mV ILEAK Output Leakage SHDN = 0V, DCIN = 0V, VOUT = 20V l –10 10 µA IC10 CHRG C/10 Current Sink CHRG = 2.5V l 15 25 38 µA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
Operating junction temperature TJ (in °C) is calculated from may cause permanent damage to the device. Exposure to any Absolute the ambient temperature TA and the total continuous package power Maximum Rating condition for extended periods may affect device dissipation PD (in watts) by the formula TJ = TA + (θJA • PD). Refer to the reliability and lifetime. Applications Information section for details.
Note 2:
The LTC4012C-3 is guaranteed to meet performance specifications
Note 4:
All currents into device pins are positive; all currents out of device over the 0°C to 85°C operating temperature range. The LTC4012I-3 is pins are negative. All voltages are referenced to GND, unless otherwise guaranteed to meet performance specifications over the –40°C to 125°C specified. operating temperature range.
Note 5:
Output current may be limited by internal power dissipation. Refer to the Applications Information section for details. 40123fb Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Test Circuits Operation Applications Information Package Description Revision History Typical Application Related Parts
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