Datasheet LTC4100 (Analog Devices) - 6

LTC4100
Typical perForMance characTerisTics INFET Response Time to Reverse Current VOUT vs IOUT PWM Frequency vs Duty Cycle
0 350 Vgs OF PFET (2V/DIV) V –0.5 gs = 0 300 –1.0 –1.5 250 V –2.0 s OF PFET (5V/DIV) 200 –2.5 TAGE ERROR (%) –3.0 150 PROGRAMMED CURRENT = 10% –3.5 100 Vs = 0V PWM FREQUENCY (kHz) –4.0 I OUTPUT VOL d (REVERSE) OF 50 DCIN = 15V PFET (5A/DIV) –4.5 DCIN = 20V DCIN = 20V V I BAT = 12.6V DCIN = 24V d = 0A –5.0 0 1.25µs/DIV 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TEST PERFORMED ON DEMOBOARD OUTPUT CURRENT (A) DUTY CYCLE (VOUT/VIN) VIN = 15VDC VCHARGE = 12.6V 4100 G02 4100 G03 CHARGER = ON INFET = 1/2 Si4925DY ICHARGE = <10mA 4100 G01
Disconnect/Reconnect Battery Battery Leakage Current (Load Dump) vs Battery Voltage Efficiency at 19V VDCIN
40 100 VDCIN = 0V 3A STEP 35 16.8V 95 30 1A STEP 12.6V 1A STEP VFLOAT 25 1V/(DIV) 90 20 15 85 EFFICIENCY (%) 3A STEP Y LEAKAGE CURRENT (µA) LOAD 10 STATE DISCONNECT RECONNECT TTER 80 BA 5 0 75 LOAD CURRENT = 1A, 2A, 3A 0 5 10 15 20 25 30 0.50 1.00 1.50 2.00 2.50 3.00 DCIN = 20V BATTERY VOLTAGE (V) CHARGING CURRENT (A) VFLOAT = 12.6V 4100 G05 4100 G06 4100 G04
Efficiency at 12.6V with 15V VDCIN SMBus Accelerator Operation Low Current Operation
100 0.5 VDD = 5V VDD = 5V 5V CBUS = 200pF TEMP = 27°C T DCIN = 15V 95 A = 25°C 0.4 0.3 90 LTC4100 NO LOW CURRENT 0.2 MODE PROGRAMMED 85 R CURRENT EFFICIENCY (%) PULLUP = 15k 0.1 LOW 0V CURRENT 80 MEASURED CURRENT (A) MODE 0 75 –0.1 0.50 1.00 1.50 2.00 2.50 3.00 0 0.1 0.2 0.3 0.4 CHARGING CURRENT (A) 1µs/DIV PROGRAMMED CURRENT (A) 4100 G07 4100 G08 4100 G09 4100fc 6 For more information www.linear.com/LTC4100