Контрактное производство электроники. Полный цикл работ

Datasheet LTC1759 (Analog Devices) - 3

ПроизводительAnalog Devices
ОписаниеSmart Battery Charger
Страниц / Страница28 / 3 — ELECTRICAL CHARACTERISTICS The. denotes specifications which apply over …
Формат / Размер файлаPDF / 302 Кб
Язык документаанглийский

ELECTRICAL CHARACTERISTICS The. denotes specifications which apply over the full operating temperature range (TJ = 0

ELECTRICAL CHARACTERISTICS The denotes specifications which apply over the full operating temperature range (TJ = 0

13 предложений от 9 поставщиков
Микросхема Чип управления батареи, Battery Charger Li-Ion 8000mA 36Pin SSOP T/R
727GS
Весь мир
LTC1759CG#TRPBF
Linear Technology
от 350 ₽
EIS Components
Весь мир
LTC1759CG#TRPBF
Analog Devices
378 ₽
ChipWorker
Весь мир
LTC1759CG#TRPBF
Linear Technology
579 ₽
Maybo
Весь мир
LTC1759CG#TRPBF
Analog Devices
по запросу
Датчики давления азиатских производителей

Модельный ряд для этого даташита

Текстовая версия документа

LTC1759
ELECTRICAL CHARACTERISTICS The

denotes specifications which apply over the full operating temperature range (TJ = 0
°
C to 100
°
C), otherwise specifications are TA = 25
°
C. VCC = DCIN = 18V, VBAT1, 2 = 12.6V, VDD = 3.3V unless otherwise specified. PARAMETER CONDITIONS MIN TYP MAX UNITS
BOOST Pin Current VBOOST = VSW + 8V, 0V ≤ VSW ≤ 20V TGATE High 2 3 mA TGATE Low 2 3 mA VBOOST Threshold to Turn TGATE Off Measured at (VBOOST – VSW) (Note 6) Low to High ● 6.8 7.3 7.6 V Hysteresis 0.25 V BOOSTC Pin Current VBOOSTC = VCC + 8V 1 mA Sense Amplifier CA1 Gain and Input Offset Voltage 11V ≤ VCC ≤ 24V, 0V ≤ VBAT ≤ 20V (With RS2 = RS3 = 200Ω) RSET = 4.93k ● 92 100 108 mV (Measured Across RS1) (Note 4) RSET = 49.3k 7 10 13 mV CA1 Bias Current (SENSE, BAT1) VSDB = High ● – 50 –120 µA VSDB = Low (Shutdown) –10 µA CA1 Input Common Mode Range ● – 0.25 VCC – 0.3 V SPIN Input Current VSDB = High, VSPIN = 12.6V ● 2 mA VSDB = Low 10 µA CL1 Turn-On Threshold 0.5mA Output Current 87 92 97 mV CL1 Transconductance Output Current from 50µA to 500µA 0.5 1 3 mho CLP Input Current 0.5mA Output Current 1 3 µA CLN Input Current 0.5mA Output Current 0.8 2 mA CA2 Transconductance VC = 1V, IVC = ±1µA 150 200 300 µmho VA Transconductance (Note 5) Ouput Current from 50µA to 500µA 0.21 0.6 1 mho
Gate Drivers
VGBIAS VCC ≥ 11V, IGBIAS ≤ 15mA, VSDB = High ● 8.4 9.1 9.6 V VTGATE High (VTGAGE – VSW) ITGATE ≤ 20mA ● 5.6 6.6 V VBGATE High IBGATE ≤ 20mA ● 6.2 7.2 V VTGATE Low (VTGATE – VSW) ITGATE ≤ 50mA ● 0.8 V VBGATE Low IBGATE ≤ 50mA ● 0.8 V INFET “ON” Clamping Voltage (VCC – VINFET) ● 6.5 7.8 9 V INFET “ON” Drive Current VINFET = VCC – 6V ● 8 20 mA INFET “OFF” Clamping Voltage VCC Not Connected, IINFET < – 2µA 1.4 V INFET “OFF” Drive Current VCC = 12.4V, (VCC – VINFET) ≥ 2V –2.5 mA VTGATE, VBGATE at Shutdown VSDB = Low, ITGATE = IBGATE = 10µA ● 1 V
Trip Points
DCDIV Threshold VDCDIV Rising from 0.8V to 1.2V ● 0.9 1.0 1.1 V DCDIV Hysteresis 25 mV DCDIV Input Bias Current VDCDIV = 1V ● 100 nA Power-Fail Indicator (VBAT2 ≥ VDCIN) (Note 7) AC_PRESENT = 1, VDCIN = 6V ● 0.84 0.89 0.97 V/V Power-Fail Indicator Hysteresis (VBAT2 ≥ VDCIN) AC_PRESENT = 1, VDCIN = 6V 0.02 V/V SYNC Pin Threshold 0.9 1.4 2.0 V SYNC Pin Input Current VSYNC = 0V – 500 µA VSYNC = 2V –30 µA 3
ТМ Электроникс. Электронные компоненты и приборы. Скидки, кэшбэк и бесплатная доставка