Datasheet LT1004 (Analog Devices) - 3

LT1004
elecTrical characTerisTics The
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denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. C, I SUFFIXES H SUFFIX SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
VZ Reverse Breakdown Voltage IR = 100µA 1.231 1.235 1.239 2.480 2.500 2.520 V LT1004M: –55°C ≤ TA ≤ 125°C ● 1.220 1.230 1.245 2.460 2.500 2.535 V LT1004C: 0°C ≤ TA ≤ 70°C ● 1.225 1.235 1.245 2.470 2.500 2.530 V LT1004I: –40°C ≤ TA ≤ 85°C ● 1.220 1.230 1.245 2.460 2.500 2.530 V ∆VZ Average Temperature Coefficient IMIN ≤ IR ≤ 20mA (Note 3) 20 20 ppm/°C ∆Temp IMIN Minimum Operating Current ● 8 10 12 20 µA ∆VZ Reverse Breakdown Voltage IMIN ≤ IR ≤ 1mA 1.0 1.0 mV ∆I Change with Current ● 1.5 1.5 mV R 1mA ≤ IR ≤ 20mA 10 10 mV ● 20 20 mV rZ Reverse Dynamic Impedance IR = 100µA 0.2 0.6 0.2 0.6 Ω ● 1.5 1.5 Ω en Wide Band Noise (RMS) IR = 100µA, 10Hz ≤ f ≤ 10kHz 60 120 µV ∆VZ Long Term Stability IR = 100µA, TA = 25°C ± 0.1°C 20 20 ppm/kHr ∆Time
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 2:
All specifications are for TA = 25°C unless otherwise noted. may cause permanent damage to the device. Exposure to any Absolute
Note 3:
Selected devices with guaranteed maximum temperature Maximum Rating condition for extended periods may affect device coefficient are available upon request. reliability and lifetime. For MIL-STD components, please refer to LTC883C data sheet for test listing and parameters. 1004fc For more information www.linear.com/LT1004 3