LT1169 Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp UFEATUSREDESCRIPTIO ■ Input Bias Current, Warmed Up: 20pA Max The LT1169 achieves a new standard of excellence in noise ■ 100% Tested Low Voltage Noise: 8nV/ √ Hz Max performance for a dual JFET op amp. For the first time low ■ S8 and N8 Package Standard Pinout voltage noise (6nV/√Hz) is simultaneously offered with ■ Very Low Input Capacitance: 1.5pF extremely low current noise (1fA/√Hz), providing the low- ■ Voltage Gain: 1.2 Million Min est total noise for high impedance transducer applications. ■ Offset Voltage: 2mV Max Unlike most JFET op amps, the very low input bias current ■ Input Resistance: 1013Ω (5pA Typ) is maintained over the entire common mode ■ Gain-Bandwidth Product: 5.3MHz Typ range which results in an extremely high input resistance ■ Guaranteed Specifications with ±5V Supplies (1013Ω). When combined with a very low input capaci- ■ Guaranteed Matching Specifications tance (1.5pF) an extremely high input impedance results, making the LT1169 the first choice for amplifying low level OU signals from high impedance transducers. The low input APPLICATIS capacitance also assures high gain linearity when buffering ■ AC signals from high impedance transducers. Photocurrent Amplifiers ■ Hydrophone Amplifiers The LT1169 is unconditionally stable for gains of 1 or more, ■ High Sensitivity Piezoelectric Accelerometers even with 1000pF capacitive loads. Other key features are ■ Low Voltage and Current Noise Instrumentation 0.6mV VOS and a voltage gain over 4 million. Each indi- Amplifier Front Ends vidual amplifier is 100% tested for voltage noise, slew rate ■ Two and Three Op Amp Instrumentation Amplifiers (4.2V/µs), and gain-bandwidth product (5.3MHz). ■ Active Filters The LT1169 is offered in the S8 and N8 packages. A full set of matching specifications are provided for precision instrumentation amplifier front ends. Specifica- tions at ±5V supply operation are also provided. For an , LTC and LT are registered trademarks of Linear Technology Corporation. even lower voltage noise please see the LT1113 data sheet. OUTYPICAL APPLICATILow Noise Light Sensor with DC Servo1kHz Output Voltage Noise C1 Density vs Source Resistance 2pF 10k √Hz) R1 – 2 – 1M VN 1k + 1 1/2 LT1169 VOUT RSOURCE 3 + C2 D2 0.022µF 1N914 100 CD +V R2 8 D1 – 6 100k R3 1N914 10 VN 1k 7 2N3904 1/2 LT1169 SOURCE + TA = 25°C 5 RESISTANCE VS = ±15V HAMAMATSU R5 R4 ONLY 4 TOTAL 1kHz VOLTAGE NOISE DENSITY (nV/ 1 S1336-5BK 10k 1k 100 1k 10k 100k 1M 10M 100M 1G (908) 231-0960 –V R2C2 > C1R1 SOURCE RESISTANCE (Ω) CD = PARASITIC PHOTODIODE CAPACITANCE 2 V– V V OUT = 100mV/µWATT FOR 200nm WAVE LENGTH N = √(VOP AMP)2 + 4kTRS + 2qIBRS 330mV/µWATT FOR 633nm WAVE LENGTH LT1169 • TA01 LT1169 • TA02 1
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