Datasheet LT1012A, LT1012 (Analog Devices) - 4

LT1012A/LT1012
ELECTRICAL CHARACTERISTICS VS =
±
15V, VCM = 0V, TA = 25
°
C, unless otherwise noted. LT1012D LT1012S8 SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
VOS Input Offset Voltage 12 60 15 120 µV (Note 3) 25 25 180 µV Long Term Input Offset 0.3 0.4 µV/month Voltage Stability lOS Input Offset Current 20 150 50 280 pA (Note 3) 30 60 380 pA IB Input Bias Current ±30 ± 150 ±80 ±300 pA (Note 3) ±40 ±120 ±400 pA en Input Noise Voltage 0.1Hz to 10Hz 0.5 0.5 µVP-P en Input Noise Voltage Density fO = 10Hz (Note 5) 17 30 17 30 nV√Hz fO = 1000Hz (Note 5) 14 22 14 22 nV√Hz in lnput Noise Current Density fO = 10Hz 20 20 fA/√Hz AVOL Large-Signal Voltage Gain VOUT = ±12V,RL ≥ 10kΩ 200 2000 200 2000 V/mV VOUT = ±10V,RL ≥ 2kΩ 200 1000 120 1000 V/mV CMRR Common Mode Rejection Ratio VCM = ±13.5V 110 132 110 132 dB PSRR Power Supply Rejection Ratio VS = ±1.2V to ± 20V 110 132 110 132 dB Input Voltage Range ±13.5 ±14.0 ±13.5 ±14.0 V VOUT Output Voltage Swing RL = 10kΩ ±13 ±14 ±13 ±14 V Slew Rate 0.1 0.2 0.1 0.2 V/µs IS Supply Current (Note 3) 380 600 380 600 µA sn1012 1012afbs 4