DICE/DWF SPECIFICATION DICE/DWF SPECIFICATION RH411MKDICE 80V, 28mΩ Radiation Hardened Power NMOS FET Descriptionabsolute MaxiMuM ratings(Note 1) The RH411MK is a high performance power N-MOSFET for use only in combination with an LTC synchronous cur- VGS ..±15V rent mode controller. This device has been characterized Operating Junction Temperature .. –55°C to 125°C for Total Ionizing Dose (TID) up to 200KRad(Si). The low 28mΩ R The RH411MKDICE are available for ordering only as part of DS(ON), low 23nC gate charge and 80V FET enhance the RHK3845MKDICE (kit) under specific terms and conditions. switching regulator efficiency. The integrated source-drain Contact LTC sales or marketing for additional details. high current Schottky diode fulfills the need for a “Catch” diode across the bottom switch of a Buck regulator and reduces power dissipation during the regulator switch non-overlap time. 1PAD FUNCTION 1. Gate 2. Gate 3. Source Substrate. Drain 32 157mils × 102mils2, Backside metal: Alloyed Gold Layer Backside potential: NMOS Drain 8 Document Outline Description Typical Application Description absolute Maximum Ratings Dice Pinout Table 1: Dice/DWF Electrical Test Limits Table 2: Electrical Characteristics Table 3: Electrical Characteristics Table 4: Electrical Test Requirements Total Dose Bias Circuit — Run Mode Total Dose Bias Circuit — Shutdown Mode Burn-in Circuit — run mode Typical Performance characteristics DESCRIPTION ABSOLUTE MAXIMUM RATINGS TABLE 1 Dice/DWF Electrical Test Limits TABLE 2 Electrical Characteristics TABLE 3 Electrical Characteristics Table 5. Electrical Test Requirements Total Dose Bias Circuit Burn-In Circuit Typical Performance Characteristics preirradiation Typical Performance Characteristics Post-irradiation Revision History
