Datasheet LT3470 (Analog Devices) - 5

LT3470
Typical perForMance characTerisTics FB Bias Current (VFB = 0V) Switch VCESAT (ISW = 100mA) Boost Diode VF (IF = 50mA) vs Temperature vs Temperature vs Temperature
120 300 0.8 0.7 100 250 0.6 80 200 (mV) (V) F 0.5 60 CESAT 150 0.4 0.3 FB CURRENT (µA) 40 100 SCHOTTKY V SWITCH V 0.2 20 50 0.1 0 0 0 –50 –25 0 25 50 75 100 125 150 –50 –25 0 25 50 75 100 125 150 –50 –25 0 25 50 75 100 125 150 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 3470 G09 3470 G10 3470 G11
Catch Diode VF (IF = 100mA) Diode Leakage (VR = 36V) vs Temperature vs Temperature Switch VCESAT
0.7 60 700 55 CATCH 0.6 BOOST 50 600 45 0.5 500 40 (V) F (mV) 0.4 35 400 30 CESAT 0.3 25 300 SCHOTTKY V 20 0.2 SWITCH V 200 15 0.1 SCHOTTKY DIODE LEAKAGE (µA) 10 100 5 0 0 0 –50 –25 0 25 50 75 100 125 150 –50 –25 0 25 50 75 100 125 150 0 100 200 300 400 TEMPERATURE (°C) TEMPERATURE (°C) SWITCH CURRENT (mA) 3470 G12 3470 G13 3470 G14
BOOST Pin Current Catch Diode Forward Voltage
14 1.0 12 0.8 10 (V) F 8 0.6 6 0.4 SCHOTTKY V 4 BOOST PIN CURRENT (mA) 0.2 2 0 0 0 100 200 300 400 0 100 200 300 400 SWITCH CURRENT (mA) CATCH DIODE CURRENT (mA) 3470 G15 3470 G16 3470fd 5 Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Typical Applications Package Description Revision History Related Parts