LT6552 5V ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25 ° C. VS = 5V, 0V; Figure 1 shows the DC test circuit,VREF = VCM = 1V, VDIFF = 0V, VSHDN = V+, unless otherwise noted. RL = RF + RG = 1k. (Note 6)SYMBOLPARAMETERCONDITIONSMINTYPMAXUNITS VOS Input Offset Voltage Both Inputs (Note 7) 5 20 mV ● 25 mV ∆VOS/∆T Input VOS Drift ● 40 µV/°C IB Input Bias Current Any Input ● 20 50 uA IOS Input Offset Current Either Input Pair ● 1 5 uA en Input Noise Voltage Density f = 10kHz 55 nV/√Hz in Input Noise Current Density f = 10kHz 0.7 pA/√Hz RIN Input Resistance Common Mode, VCM = 0V to 3V 300 kΩ CMRR Common Mode Rejection Ratio VCM = 0V to 3V ● 58 83 dB Input Range ● 0 3 V PSRR Power Supply Rejection VS = 3V to 12V ● 48 54 dB Minimum Supply (Note 8) ● 3 V GE Gain Error VO = 0.5V to 3.5V, RL = 1k ● 1 3 % RL = 150Ω ● 1 3 % VOH Swing High (VDIFF = 0.6V), VREF(Pin 1) = 0V, AV = 10 RL = 1k ● 4.8 4.875 V RL = 150Ω ● 3.6 4.3 V RL = 75Ω, 0°C ≤ TA ≤ 70°C (Only) ● 2.75 3.4 V VOL Swing Low (VDIFF = –0.1V), VREF (Pin 1) = 0V, AV = 10 RL = 1k ● 8 50 mV ISINK = 5mA ● 65 120 mV ISINK = 10mA ● 110 200 mV SR Slew Rate VOUT = 0.5V to 3.5V Measure from 1V to 3V, RL = 150Ω, AV = 2 450 V/µs FPBW Full-Power Bandwidth (Note 9) VO = 2VP-P 70 MHz BW Small-Signal –3dB Bandwidth AV = 2, RL = 150Ω 70 MHz tr, tf Rise Time, Fall Time 5V, 0V; AV = 50, VO = 0.5V to 3.5V, 125 175 ns 20% to 80%, RL = 1k tS Settling Time to 3% AV = 2, ∆VOUT = 2V, Positive Step 20 ns Settling Time to 1% RL = 150Ω 30 ns Differential Gain AV = 2, RL = 150Ω, Output Black Level = 1V 0.25 % Differential Phase AV = 2, RL = 150Ω, Output Black Level = 1V 0.04 Deg ISC Short-Circuit Current VOUT = 0V, VDIFF = 1V 50 70 mA 0°C ≤ TA ≤ 70°C ● 45 mA –40°C ≤ TA ≤ 85°C ● 35 mA IS Supply Current 13.5 14.5 mA ● 16 mA Supply Current Shutdown VSHDN = 0.5V ● 400 900 µA VL Shutdown Pin Input Low Voltage ● 0.5 V VH Shutdown Pin Input High Voltage ● 4.7 V Shutdown Pin Current VSHDN = 0.5V ● 60 200 µA VSHDN = 4.7V ● 4 10 µA 6552f 4
