RH108A TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation, Note 4)TA = 25°CSUB-–55°C ≤ TA ≤ 125°CSUB-SYMBOL PARAMETERCONDITIONSNOTESMINTYPMAXGROUPMINTYPMAXGROUPUNITS VOS Input Offset Voltage 0.5 1 1.0 2,3 mV ΔVOS Average Tempco of Offset 3 5.0 μV/°C ΔTemp Voltage IOS Input Offset Current 0.2 1 0.4 2,3 nA ΔIS Average Tempco of Offset 3 2.5 pA/°C ΔTemp Current IB Input Bias Current 2.0 1 3.0 2,3 nA AVOL Large-Signal Voltage Gain VS = ±15V, VOUT = ±10V 80 4 40 5,6 V/mV RL ≥ 10k CMRR Common Mode Rejection Ratio 96 1 96 2,3 dB PSRR Power Supply Rejection Ratio 96 1 96 2,3 dB Input Voltage Range VS = ±15V 3 ±13.5 ±13.5 V VOUT Output Voltage Swing VS = ±15V, RL = 10k ±13 4 ±13 5,6 V RIN Input Resistance 3 30 MΩ IS Supply Current (Note 6) 0.6 1 0.4 2 mA TABLE 1A: ELECTRICAL CHARACTERISTICS (Preirradiation, Note 4)10KRAD (Si)20KRAD (Si)50KRAD (Si)80KRAD (Si)SYMBOLPARAMETERCONDITIONSNOTESMINMAXMINMAXMINMAXMINMAXUNITS VOS Input Offset Voltage 0.5 0.5 0.5 1.0 mV IOS Input Offset Current 0.3 0.3 0.3 0.3 nA IB Input Bias Current ±2.0 ±2.0 ±2.0 ±4.0 nA AVOL Large-Signal Voltage Gain VS = ±15V, VOUT = ±10V 98 98 90 86 dB RL ≥ 10k CMRR Common Mode Rejection Ratio 96 96 84 70 dB PSRR Power Supply Rejection Ratio 4 96 96 84 70 dB Input Voltage Range 3 ±13.5 ±13.5 ±13.5 ±13.5 V VOUT Output Voltage Swing ±13 ±13 ±13 ±13 V RIN Input Resistance 3 30 30 30 30 MΩ IS Supply Current 0.6 0.6 0.6 0.6 mA Note 1: Stresses beyond those listed under Absolute Maximum Ratings Note 3: Guaranteed by design, characterization or correlation to may cause permanent damage to the device. Exposure to any Absolute othertested parameters. Maximum Rating condition for extended periods may affect device Note 4: ±5V ≤ VS ≤ ±20V preirradiation, ±5V ≤ VS ≤ ±15V postirradiation, reliability and lifetime. unless otherwise noted. Note 2: For supply voltages less than ±15V, the maximum input voltage Note 5: VS = ±15V, VCM = 0V, TA = 25°C unless otherwise noted. isequal to the supply voltage. Note 6: 25°C ≤ TA ≤ 125°C. rh108afc 2
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