Datasheet LTC3544 (Analog Devices) - 3

LTC3544
ELECTRICAL CHARACTERISTICS The
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denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VIN = 3.6V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IS Input DC Bias Current Active Mode VFB = 0.7V, ILOAD = 0A, 2.25MHz 825 1100 μA (Four Regulators Enabled) Sleep Mode VFB = 0.9V, ILOAD = 0A, 2.25MHz 70 80 μA (Four Regulators Enabled) Shutdown 0.1 2 μA fOSC Oscillator Frequency VIN = 3V 2.25 MHz VIN = 2.5V to 5.5V ● 1.8 2.7 MHz VRUN(HIGH) RUNx Input High Voltage ● 1.0 V VRUN(LOW) RUNx Input Low Voltage ● 0.3 V ISWx SWx Leakage VRUN = 0V, VSW = 0V or 5.5V, VIN = 5.5V ±0.1 ±1 μA IRUNx RUN Leakage Current VIN = 5.5V ● ±0.1 ±1 μA IVFBx VFBx Leakage Current 80 nA tSS Soft-Start Period VFB = 7.5% to 92.5% Full Scale 650 875 1200 μs VUVLO Undervoltage Lockout ● 1.9 2.25 V
Individual Regulator Characteristics Regulator SW300 – 300mA
IPK Peak Switch Current Limit VFB < VFBREG, Duty Cycle < 35% 400 600 800 mA IS300 Input DC Bias Current–Reg SW300 Only VFB = 0.9V, ILOAD = 0A, 2.25MHz 32 μA Burst Mode Operation (Sleep) RPFET RDS(ON) of P-Channel FET (Note 7) ISW = 100mA 0.55 Ω RNFET RDS(ON) of N-Channel FET (Note 7) ISW = –100mA 0.50 Ω
Regulator SW200A – 200mA
IPK Peak Switch Current Limit VFB < VFBREG, Duty Cycle < 35% 300 400 500 mA IS200 Input DC Bias Current–Reg SW200A Only VFB = 0.9V, ILOAD = 0A, 2.25MHz 32 μA Burst Mode Operation (Sleep) RPFET RDS(ON) of P-Channel FET (Note 7) ISW = 100mA 0.65 Ω RNFET RDS(ON) of N-Channel FET (Note 7) ISW = –100mA 0.60 Ω
Regulator SW200B – 200mA
IPK Peak Switch Current Limit VFB < VFBREG, Duty Cycle < 35% 300 400 500 mA IS200 Input DC Bias Current–Reg SW200B Only VFB = 0.9V, ILOAD = 0A, 2.25MHz 32 μA Burst Mode Operation (Sleep) RPFET RDS(ON) of P-Channel FET (Note 7) ISW = 100mA 0.65 Ω RNFET RDS(ON) of N-Channel FET (Note 7) ISW = –100mA 0.60 Ω
Regulator SW100 – 100mA
IPK Peak Switch Current Limit VFB < VFBREG, Duty Cycle < 35% 200 300 400 mA IS100 Input DC Bias Current–Reg SW100B Only VFB = 0.9V, ILOAD = 0A, 2.25MHz 32 μA Burst Mode Operation (Sleep) RPFET RDS(ON) of P-Channel FET (Note 7) ISW = 100mA 0.80 Ω RNFET RDS(ON) of N-Channel FET (Note 7) ISW = –100mA 0.75 Ω
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 2:
The LTC3544E is guaranteed to meet performance specifi cations may cause permanent damage to the device. Exposure to any Absolute from 0°C to 85°C. Specifi cations over the –40°C to 85°C operating Maximum Rating condition for extended periods may affect device temperature range are assured by design, characterization and correlation reliability and lifetime. with statistical process controls. 3544fa 3