Datasheet BD136G, BD138G, BD140G (ON Semiconductor) - 3
| Производитель | ON Semiconductor |
| Описание | Plastic Medium-Power Silicon PNP Transistors |
| Страниц / Страница | 4 / 3 — BD136G, BD138G, BD140G. TYPICAL CHARACTERISTICS. Figure 3. Base−Emitter … |
| Версия | 16 |
| Формат / Размер файла | PDF / 83 Кб |
| Язык документа | английский |
BD136G, BD138G, BD140G. TYPICAL CHARACTERISTICS. Figure 3. Base−Emitter Saturation Voltage. Figure 4. Base−Emitter On Voltage
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ON Semiconductor | 11 ₽ | |
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BD136G, BD138G, BD140G TYPICAL CHARACTERISTICS
1.2 1.2 IC/IB = 10 VCE = 2 V AGE (V) 1.0 T 1.0 −55°C −55°C AGE (V) 0.8 0.8 T 25°C 25°C 0.6 0.6 150°C , BASE−EMITTER TION VOL 150°C 0.4 0.4 sat) BE( TURA V SA 0.2 , BASE−EMITTER ON VOL 0.2 on) 0 BE( 0 0.001 0.01 0.1 1 10 V 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage
1000 10 f = 1 MHz 0.1 ms Cib 5 ms 0.5 ms 100 1 Cob TJ = 125°C dc ANCE (pF) OR CURRENT (A) ACIT 10 0.1 C, CAP BD136 , COLLECT I C BD138 BD140 1 0.01 0.1 1 10 100 1 10 80 VR, REVERSE VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Capacitance Figure 6. Active−Region Safe Operating Area
1.50 1.25 TION (W) 1.00 A 0.75 0.50 , POWER DISSIP D 0.25 P 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C)
Figure 7. Power Derating http://onsemi.com 3
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