Datasheet BD135G, BD137G, BD139G (ON Semiconductor)
Производитель | ON Semiconductor |
Описание | Plastic Medium-Power Silicon NPN Transistors |
Страниц / Страница | 4 / 1 — http://onsemi.com. Features. 1.5 A POWER TRANSISTORS. NPN SILICON. 45, … |
Версия | 17 |
Формат / Размер файла | PDF / 82 Кб |
Язык документа | английский |
http://onsemi.com. Features. 1.5 A POWER TRANSISTORS. NPN SILICON. 45, 60, 80 V, 12.5 W. MAXIMUM RATINGS. Rating. Symbol. Value. Unit
51 предложений от 20 поставщиков Биполярный транзистор, универсальный, NPN, 60 В, 1.5 А, 65 Вт, TO-225AA, Through Hole |
| BD137G ON Semiconductor | 6.07 ₽ | |
| BD137G
| 13 ₽ | |
| BD137G ON Semiconductor | от 55 ₽ | |
| BD137G ON Semiconductor | 82 ₽ | |
Модельный ряд для этого даташита
Текстовая версия документа
BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
http://onsemi.com Features
• High DC Current Gain
1.5 A POWER TRANSISTORS
• BD 135, 137, 139 are complementary with BD 136, 138, 140
NPN SILICON
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
45, 60, 80 V, 12.5 W
Compliant* COLLECTOR 2, 4
MAXIMUM RATINGS Rating Symbol Value Unit
3 Collector−Emitter Voltage VCEO Vdc BASE BD135G 45 BD137G 60 BD139G 80 1 EMITTER Collector−Base Voltage VCBO Vdc BD135G 45 BD137G 60 BD139G 100 Emitter−Base Voltage VEBO 5.0 Vdc
TO−225
Collector Current I
CASE 77−09
C 1.5 Adc
STYLE 1
Base Current IB 0.5 Adc Total Device Dissipation P 1 D 2 3 @ TA = 25°C 1.25 Watts Derate above 25°C 10 mW/°C
MARKING DIAGRAM
Total Device Dissipation PD @ TC = 25°C 12.5 Watts Derate above 25°C 100 mW/°C YWW Operating and Storage Junction TJ, Tstg – 55 to + 150 °C Temperature Range BD1xxG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. WW = Work Week BD1xx = Device Code
THERMAL CHARACTERISTICS
xx = 35, 37, 39
Characteristic Symbol Max Unit
G = Pb−Free Package Thermal Resistance, Junction−to−Case RqJC 10 °C/W
ORDERING INFORMATION
Thermal Resistance, Junction−to−Ambient RqJA 100 °C/W
Device Package Shipping
BD135G TO−225 500 Units / Box (Pb−Free) BD135TG TO−225 50 Units / Rail (Pb−Free) BD137G TO−225 500 Units / Box (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please BD139G TO−225 500 Units / Box download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free) Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 17 BD135/D