LTM4632 Ultrathin, Triple Output, Step-Down µModule Regulator for DDR-QDR4 Memory FEATURESDESCRIPTION n Complete DDR-QDR4 SRAM Power Solution The LTM®4632 is an ultrathin triple output step-down Including VDDQ, VTT, VTTR (or VREF) µModule® (power module) regulator to provide complete n Solution in 0.5cm2 (Dual-Sided PCB) power solution for DDR-QDR4 SRAM. Operating from a n Wide Input Voltage Range: 3.6V to 15V 3.6V to 15V input voltage, the LTM4632 supports two ±3A n 3.3V Input Compatible with VIN Tied to INTVCC output rails, both sink and source capable, for VDDQ and n 0.6V to 2.5V Output Voltage Range VTT, plus a 10mA low noise reference VTTR output. Both n Dual ±3A DC Output Current with Sink and Source VTT and VTTR track and are equal to VDDQ/2. Housed Capability in a 6.25mm × 6.25mm × 1.82mm LGA and 6.25mm × n ±1.5%, ±10mA Buffered VTTR = VDDQ/2 Output 6.25mm × 2.42mm BGA packages, the LTM4632 includes n 3A VDDQ + 3A VTT or Dual Phase Single 6A VTT the switching controller, power FETs, inductors and sup- n ±1.5% Maximum Total Output Voltage Regulation port components. Alternatively, the power module can Error Over Load, Line and Temperature also be configured as a two phase single ±6A output n Current Mode Control, Fast Transient Response VTT. Only a few ceramic input and output capacitors are n External Frequency Synchronization needed to complete the design. n Multiphase Parallelable with Current Sharing The LTM4632 supports selectable Burst Mode operation n Selectable Burst Mode® Operation (CH1 only) and output voltage tracking for supply rail n Overvoltage Input and Overtemperature Protection sequencing. Its high switching frequency and current n Power Good Indicator mode control enable a very fast transient response to n Ultrathin 6.25mm × 6.25mm × 1.82mm LGA and line and load changes without sacrificing stability. 6.25mm × 6.25mm × 2.42mm BGA Packages Fault protection features include overvoltage input, over- current and overtemperature protection. APPLICATIONS n The LTM4632 is available with SnPb (BGA) or RoHS com- DDR Memory Power Supply n pliant terminal finish General Purpose Point-of-Load Conversion n Telecom, Networking and Industrial Equipment All registered trademarks and trademarks are the property of their respective owners. TYPICAL APPLICATIONOutput Efficiency vs Load CurrentQDR4 Memory Power µModule Regulator 95 VDDQ 90 PGOOD1 PGOOD2 22µF 1.3V, 3A VIN 4V 3.6V TO 15V VIN VOUT1 85 10µF RUN1 VTT V 25V RUN2 OUT2 LTM4632 22µF 0.65V, ±3A 80 INTVCC VTTR 4V SYNC/MODE FB1 VTTR EFFICIENCY (%) 75 VDDQ TRACK/SS1 COMP1 0.65V, 10mA VDDQIN COMP2 70 GND 52.3k 5V INPUT 12V INPUT 4632 TA01a 65 0 1 2 3 LOAD CURRENT (A) 4632 TA01b Rev. D Document Feedback For more information www.analog.com 1 Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Decoupling Requirements Operation Applications Information Package Description Revision History Package Photo Design Resources Related Parts
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