Datasheet 1N5820, 1N5821, 1N5822 (ON Semiconductor) - 2

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1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Rating Symbol 1N5820 1N5821 1N5822 Unit
Peak Repetitive Reverse Voltage VRRM 20 30 40 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Non-Repetitive Peak Reverse Voltage VRSM 24 36 48 V RMS Reverse Voltage VR(RMS) 14 21 28 V Average Rectified Forward Current (Note 1) IO 3.0 A VR(equiv) 0.2 VR(dc), TL = 95°C (RqJA = 28°C/W, P.C. Board Mounting, see Note 5) Ambient Temperature TA 90 85 80 °C Rated VR(dc), PF(AV) = 0 RqJA = 28°C/W Non-Repetitive Peak Surge Current IFSM 80 (for one cycle) A (Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75°C) Operating and Storage Junction Temperature Range TJ, Tstg -65 to +125 °C (Reverse Voltage applied) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
*THERMAL CHARACTERISTICS
(Note 5)
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Ambient RqJA 28 °C/W
*ELECTRICAL CHARACTERISTICS
(TL = 25°C unless otherwise noted) (Note 1)
Characteristic Symbol 1N5820 1N5821 1N5822 Unit
Maximum Instantaneous Forward Voltage (Note 2) VF V (iF = 1.0 Amp) 0.370 0.380 0.390 (iF = 3.0 Amp) 0.475 0.500 0.525 (iF = 9.4 Amp) 0.850 0.900 0.950 Maximum Instantaneous Reverse Current iR mA @ Rated dc Voltage (Note 2) TL = 25°C 2.0 2.0 2.0 TL = 100°C 20 20 20 1. Lead Temperature reference is cathode lead 1/32″ from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. *Indicates JEDEC Registered Data for 1N5820-22.
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