Datasheet 1N5820, 1N5821, 1N5822 (ON Semiconductor) - 7

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1N5820, 1N5821, 1N5822
50 100 (AMP) 70 30 50 20 TL = 75°C VE CURRENT f = 60 Hz A TJ = 100°C 30 10 20 7.0 1 CYCLE , PEAK HALF-W (AMP) 5.0 SURGE APPLIED AT RATED LOAD CONDITIONS I FSM 10 25°C 3.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 NUMBER OF CYCLES ARD CURRENT 2.0 W
Figure 8. Maximum Non-Repetitive Surge Current
1.0 100 ANEOUS FOR 0.7 50 ANT TJ = 125°C 0.5 20 , INST i F 10 100°C 0.3 (mA) 5.0 0.2 2.0 75°C 1.0 0.1 0.5 , REVERSE CURRENT 0.2 0.07 I R 25°C 0.1 0.05 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0.05 1N5820 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1N5821 0.02 1N5822
Figure 7. Typical Forward Voltage
0.01 0 4.0 8.0 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) 500
Figure 9. Typical Reverse Current
1N5820 300
NOTE 6 — HIGH FREQUENCY OPERATION
ANCE (pF) 200 1N5821 ACIT TJ = 25°C Since current flow in a Schottky rectifier is the result of f = 1.0 MHz majority carrier conduction, it is not subject to junction di‐ C, CAP ode forward and reverse recovery transients due to minority 100 carrier injection and stored charge. Satisfactory circuit ana‐ 1N5822 lysis work may be performed by using a model consisting 70 of an ideal diode in parallel with a variable capacitance. 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 (See Figure 10.) VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance http://onsemi.com 7