Datasheet 2N7000, 2N7002, NDS7002A (ON Semiconductor) - 4

2N7000 / 2N7002 / NDS7002A — N-Chan Electrical Characteristics
(Continued)
Symbol Parameter Conditions Type Min. Typ. Max. Unit Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, All 20 50 pF f = 1.0 MHz Coss Output Capacitance All 11 25 Crss Reverse Transfer All 4 5 Capacitance ton Turn-On Time VDD = 15 V, RL = 25 , 2N7000 ns ID = 500 mA, 10 VGS= 10 V, RGEN = 25 VDD = 30 V, RL = 150 , 2N7002 ID = 200 mA, VGS= 10 V, NDS7002A 20 RGEN = 25 toff Turn-Off Time VDD = 15 V, RL = 25 , 2N7000 ns ID = 500 mA, VGS= 10 V, 10 RGEN = 25
nel Enh
VDD = 30 V, RL = 150 , 2N7002 ID = 200 mA, VGS= 10 V, NDS7002A 20 RGEN = 25
Drain-Source Diode Characteristics and Maximum Ratings a ncement Mode Field Effect T
IS Maximum Continuous Drain-Source Diode Forward 2N7002 115 mA Current NDS7002A 280 ISM Maximum Pulsed Drain-Source Diode Forward 2N7002 0.8 A Current NDS7002A 1.5 V Drain-Source Diode SD VGS = 0 V, 2N7002 V Forward Voltage 0.88 1.5 IS = 115 mA(1) VGS = 0 V, NDS7002A 0.88 1.2 IS = 400 mA(1)
Note:
1. Pulse test : Pulse Width ≤ 300 μs, Duty Cycel ≤ 2 %.
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