B SS138Electrical Characteristics T = 25°C unless otherwise noted A SymbolParameterTestConditionsMinTyp MaxUnitsOff Characteristics BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 50 V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA,Referenced to 25°C mV/°C ∆ 72 TJ
Coefficient IDSS Zero Gate Voltage Drain Current VDS = 50 V, VGS = 0 V 0.5 µA VDS = 50 V, VGS = 0 V TJ = 125°C 5 µA VDS = 30 V, VGS = 0 V 100 nA IGSS Gate–Body Leakage. VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 0.8 1.3 1.5 V ∆VGS(th) Gate Threshold Voltage ID = 1 mA,Referenced to 25°C –2 mV/°C ∆TJ Temperature Coefficient RDS(on) Static Drain–Source VGS = 10 V, ID = 0.22 A 0.7 3.5 Ω On–Resistance VGS = 4.5 V, ID = 0.22 A 1.0 6.0 VGS = 10 V, ID = 0.22 A, TJ = 125°C 1.1 5.8 ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 0.2 A gFS Forward Transconductance VDS = 10V, ID = 0.22 A 0.12 0.5 S Dynamic Characteristics Ciss Input Capacitance 27 pF VDS = 25 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz 13 pF Crss Reverse Transfer Capacitance 6 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 9 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time V 2.5 5 ns DD = 30 V, ID = 0.29 A, t V r Turn–On Rise Time GS = 10 V, RGEN = 6 Ω 9 18 ns td(off) Turn–Off Delay Time 20 36 ns tf Turn–Off Fall Time 7 14 ns Qg Total Gate Charge V 1.7 2.4 nC DS = 25 V, ID = 0.22 A, Q VGS = 10 V gs Gate–Source Charge 0.1 nC Qgd Gate–Drain Charge 0.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 0.22 A VSD Drain–Source Diode Forward VGS = 0 V, IS = 0.44 A(Note 2) 0.8 1.4 V Voltage Notes:1. Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 350°C/W when mounted on a minimum pad.. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2
