SUP90P06-09L Vishay Siliconix P-Channel 60 V (D-S) 175 °C MOSFETFEATURESPRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V)RDS(on) ()ID (A)c • Compliant to RoHS Directive 2002/95/EC 0.0093 at V RoHS GS = - 10 V - 90 - 60 COMPLIANT 0.0118 at VGS = - 4.5 V - 90 APPLICATIONS • DC/DC Primary Switch TO-220AB S G Drain connected to Tab G D S Top View D Ordering Information: SUP90P06-09L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) ParameterSymbol LimitUnit Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 TC = 25 °C - 90 Continuous Drain Current (T I J = 175 °C)c D TC = 125 °C - 67 A Pulsed Drain Current IDM - 200 Avalanche Current IAS - 65 L = 0.1 mH Single Pulse Avalanche Energya EAS 211 mJ TC = 25 °C 250b Power Dissipation PD W TA = 25 °C 2.4 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGSParameterSymbol LimitUnit Junction-to-Ambient Free Air RthJA 62 °C/W Junction-to-Case RthJC 0.6 Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. Limited by package. Document Number: 73010 www.vishay.com S10-2545-Rev. B, 08-Nov-10 1
