Datasheet BZT52 (Vishay) - 4

BZT52-Series
www.vishay.com Vishay Semiconductors
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) mA Ω 103 100 T = 25 °C J 102 5 4 I 10 F 3 r 33 T = 100 °C zj J 2 1 27 22 10-1 10 18 T = 25 °C J 10-2 15 5 4 12 10-3 3 10 2 10-4 6.8/8.2 6.2 10-5 1 0 0.2 0.4 0.6 0.8 1V 0.1 2 5 1 2 5 10 2 5 100 mA 18114 V 18119 I F Z Fig. 1 - Forward characteristics Fig. 4 - Dynamic Resistance vs. Zener Current mW Ω 500 103 T = 25 °C 7 j 5 400 4 R 3 47 + 51 P zj 43 tot 2 39 300 36 102 200 7 5 4 3 100 2 0 10 0 100 200 °C 0.1 2 3 4 5 1 2 3 4 5 10 18120 mA 18888 T I amb Z Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature Fig. 5 - Dynamic Resistance vs. Zener Current Ω Ω 103 1000 ΔV T = 25 °C Z J 5 R = R x V x 5 4 zth thA Z ΔT 4 3 j 3 2 2 r Rzth zj 100 102 5 5 4 4 3 3 2 2 10 2.7 10 3.6 5 5 4 4.7 4 3 5.1 3 negative positive 2 2 5.6 1 1 0.1 2 5 1 2 5 10 2 5 100 mA 1 2 3 4 5 10 2 3 4 5 100 V 18117 IZ 18121 V at I = 5 mA Z Z Fig. 3 - Dynamic Resistance vs. Zener Current Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Rev. 1.9, 20-Feb-18
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