IRL3705NPbF HEXFET® Power MOSFET Logic - Level Gate Drive D Advanced Process Technology VDSS55V Dynamic dv/dt Rating G RDS(on) max.0.01 175°C Operating Temperature Fast Switching S ID89A Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on- S D resistance per silicon area. This benefit, combined G with the fast switching speed and ruggedized device TO-220AB design that HEXFET Power MOSFETs are well IRL3705NPbF known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G D S The TO-220 package is universally preferred for all Gate Drain Source commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry. Standard PackBase part numberPackage TypeOrderable Part NumberFormQuantity IRL3705NPbF TO-220 Tube 50 IRL3705NPbF Absolute Maximum RatingsSymbol ParameterMax.Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 89 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 63 A IDM Pulsed Drain Current 310 PD @TC = 25°C Maximum Power Dissipation 170 W Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 340 mJ IAR Avalanche Current 46 A EAR Repetitive Avalanche Energy 17 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) Thermal ResistanceSymbol ParameterTyp.Max.Units RJC Junction-to-Case ––– 0.90 RCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RJA Junction-to-Ambient ––– 62 1 2018-05-25
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