Datasheet IRL3705N (Infineon) - 2

IRL3705NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.010 V Static Drain-to-Source On- GS = 10V, ID = 46A RDS(on) ––– ––– 0.012  V Resistance GS = 5.0V, ID = 46A  ––– ––– 0.018 VGS = 4.0V, ID = 39A  VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Trans conductance 50 ––– ––– S VDS = 25V, ID = 46A ––– ––– 25 V I DS = 55V, VGS = 0V DSS Drain-to-Source Leakage Current µA ––– ––– 250 VDS = 44V,VGS = 0V,TJ =150°C Gate-to-Source Forward Leakage ––– ––– 100 V I GS = 16V GSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 98 ID = 46A Qgs Gate-to-Source Charge ––– ––– 19 nC VDS = 44V Qgd Gate-to-Drain Charge ––– ––– 49 VGS = 5.0V , See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V tr Rise Time ––– 140 ––– I ns D = 46A td(off) Turn-Off Delay Time ––– 37 ––– RG= 1.8VGS = 5.0V  tf Fall Time ––– 78 ––– RD= 0.59See Fig. 10 Between lead, LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package LS Internal Source Inductance ––– 7.5 ––– and center of die contact Ciss Input Capacitance ––– 3600 ––– VGS = 0V Coss Output Capacitance ––– 870 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol IS ––– ––– 89 (Body Diode) showing the A Pulsed Source Current integral reverse ISM ––– ––– 310 (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 46A,VGS = 0V  trr Reverse Recovery Time ––– 94 140 ns TJ = 25°C ,IF = 46A Qrr Reverse Recovery Charge ––– 290 440 nC di/dt = 100A/µs  ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS +LD)
Notes:
  Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)  VDD = 25V, starting TJ = 25°C, L = 320H, RG = 25, IAS = 46A.(See fig.12)  ISD 46A, di/dt 250A/µs, VDD V(BR)DSS, TJ  175°C.  Pulse width 300µs; duty cycle  2%.  Calculated continuous current based on maximum allowable junction temperature; for recommended current- handling of the package refer to Design TIP # 93-4 . 2 2018-05-25