2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 50 V Collector-Base Voltage 50 V Emitter-Base Voltage 4.5 V IC Collector Current -Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C VCEO Collector-Emitter Voltage VCBO VEBO *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 2002 Fairchild Semiconductor Corporation Max. 2N5210 625 5.0 83.3 MMBT5210 350 2.8 200 357 Units mW mW/°C °C/W °C/W 2N5210, Rev B
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