Datasheet MTD20P06HDL (ON Semiconductor)

ПроизводительON Semiconductor
ОписаниеPower MOSFET 60 V, 20 A, Logic Level, P-Channel DPAK
Страниц / Страница8 / 1 — Preferred Device. P−Channel DPAK. http://onsemi.com. 20 AMPERES, 60 …
Версия6
Формат / Размер файлаPDF / 88 Кб
Язык документаанглийский

Preferred Device. P−Channel DPAK. http://onsemi.com. 20 AMPERES, 60 VOLTS. DS(on) = 175 m. P−Channel. Features. MAXIMUM RATINGS

Datasheet MTD20P06HDL ON Semiconductor, Версия: 6

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TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM
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MTD20P06HDL

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link to page 1 link to page 1 link to page 1 MTD20P06HDL
Preferred Device
Power MOSFET 20 Amps, 60 Volts, Logic Level
P−Channel DPAK http://onsemi.com
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for
20 AMPERES, 60 VOLTS
low−voltage, high−speed switching applications in power supplies,
R
converters and PWM motor controls, and other inductive loads. The
DS(on) = 175 m
W avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional
P−Channel
safety margin against unexpected voltage transients. D
Features
• Ultra Low RDS(on), High−Cell Density, HDTMOS • Diode is Characterized for Use in Bridge Circuits • G IDSS and VDS(on) Specified at Elevated Temperature • Avalanche Energy Specified • S Pb−Free Package is Available
MAXIMUM RATINGS
(T
MARKING DIAGRAM & PIN ASSIGNMENTS
C = 25°C unless otherwise noted)
Rating Symbol Value Unit
Gate 1 Drain−Source Voltage V 4 DSS 60 Vdc YWW Drain−Gate Voltage (R 4 GS = 1.0 MW) VDGR 60 Vdc Drain 2 20P Drain 1 2 Gate−Source Voltage 06HLG 3 − Continuous VGS "15 Vdc
DPAK
Source 3 − Non−Repetitive (tpv10 ms) VGSM "20 Vpk
CASE 369C (Surface Mount)
Drain Current
STYLE 2
− Continuous ID 15 Adc − Continuous @ 100°C ID 9.0 − Single Pulse (tpv10 ms) IDM 45 Apk 20P06HL = Device Code Total Power Dissipation PD 72 W Y = Year Derate above 25°C 0.58 W/°C WW = Work Week Total Power Dissipation @ T 1.75 W C = 25°C (Note 2) G = Pb−Free Package Operating and Storage Temperature Range TJ, Tstg −55 to °C 150
ORDERING INFORMATION
Single Pulse Drain−to−Source Avalanche EAS 300 mJ Energy − Starting T
Device Package Shipping
† J = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, I MTD20P06HDL DPAK 75 Units/Rail L = 15 Apk, L = 2.7 mH, RG = 25 W) Thermal Resistance °C/W MTD20P06HDLT4 DPAK 2500 Tape & Reel − Junction−to−Case RqJC 1.73 − Junction−to−Ambient (Note 1) Rq MTD20P06HDLT4G DPAK 2500 Tape & Reel JA 100 − Junction−to−Ambient (Note 2) Rq (Pb−Free) JA 71.4 Maximum Lead Temperature for Soldering T †For information on tape and reel specifications, L 260 °C Purposes, 1/8″ from case for 10 seconds including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Stresses exceeding Maximum Ratings may damage the device. Maximum Brochure, BRD8011/D. Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Preferred
devices are recommended choices for future use Recommended Operating Conditions may affect device reliability. and best overall value. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. When surface mounted to an FR4 board using 0.5 sq. inch pad size. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
June, 2006 − Rev. 6 MTD20P06HDL/D