Datasheet 2N3905/2N3906 (Motorola) - 3
| Производитель | Motorola |
| Описание | PNP Silicon General Purpose Transistors |
| Страниц / Страница | 6 / 3 — Figure 1. Delay and Rise Time. Figure 2. Storage and Fall Time. … |
| Формат / Размер файла | PDF / 146 Кб |
| Язык документа | английский |
Figure 1. Delay and Rise Time. Figure 2. Storage and Fall Time. Equivalent Test Circuit. TYPICAL TRANSIENT CHARACTERISTICS
40 предложений от 23 поставщиков NTE ELECTRONICS 2N3905 Bipolar (BJT) Single Transistor, PNP, -80V, 625mW, -200mA, 50 hFE |
| 2N3905
ON Semiconductor | 15 ₽ | |
| 2N3905
NTE Electronics | 31 ₽ | |
| 2N3905-D
Central Semiconductor | по запросу | |
| 2N3905BULK
Central Semiconductor | по запросу | |
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3 V 3 V < 1 ns +9.1 V 275 275 < 1 ns +0.5 V 10 k 10 k 0 CS < 4 pF* 1N916 CS < 4 pF* 10.6 V 300 ns 10 < t1 < 500 ms DUTY CYCLE = 2% t 10.9 V 1 DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 5000 VCC = 40 V 3000 7.0 IC/IB = 10 2000 5.0 Cobo 1000 700 ANCE (pF) Cibo 3.0 500 ACIT Q, CHARGE (pC) 300 CAP 2.0 200 QT QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance Figure 4. Charge Data
500 500 IC/IB = 10 V 300 300 CC = 40 V I 200 200 B1 = IB2 IC/IB = 20 100 100 (ns) 70 70 50 tr @ VCC = 3.0 V TIME 50 ALL TIME (ns) 30 15 V 30 t , F f 20 20 IC/IB = 10 40 V 10 2.0 V 10 7 t 7 d @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time Figure 6. Fall Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data 3
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