Datasheet STGWA40IH65DF (STMicroelectronics) - 2

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STGWA40IH65DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 80 IC A Continuous collector current at TC = 100 °C 40 I (1) CP Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 40 IF Continuous forward current at TC = 100 °C 20 A I (1) FP Pulsed forward current 120 PTOT Total power dissipation at TC = 25 °C 238 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature range - 55 to 175 1. Pulse width limited by maximum junction temperature.
Table 2. Thermal data Symbol Parameter Value Unit
Thermal resistance junction-case IGBT 0.63 RthJC Thermal resistance junction-case diode 2.08 °C/W RthJA Thermal resistance junction-ambient 50
DS11801
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Rev 3 page 2/15
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 TO-247 long leads package information Revision history