Datasheet STGWA40IH65DF (STMicroelectronics) - 6

STGWA40IH65DF Electrical characteristics (curves) Figure 7. Forward bias safe operating area Figure 8. Transfer characteristics
I IGBT080820181007FSOA C I IGBT100820181015TCH C (A) Single pulse, T (A) C = 25 °C, VCE = 6 V TJ ≤ 175 °C, VGE = 15 V 100 10 2 80 tp = 1 µs 60 tp = 10 µs TJ = 175 °C 10 1 40 tp = 100 µs T t 20 J = 25 °C p = 1 ms 10 0 0 10 0 10 1 10 2 VCE (V) 5 6 7 8 9 10 VGE (V)
Figure 9. Diode VF vs forward current Figure 10. Normalized VGE(th) vs junction temperature
V IGBT080820181007DVF F V IGBT100820181016NVGE GE(th) (V) (Norm.) 3.0 TJ = 25 °C VCE = VGE 1.1 E IC = 1 mA 2.5 TJ = -40 °C 1 2.0 TJ = 175 °C 0.9 1.5 0.8 1.0 0.5 0.7 0 0.6 0 20 40 60 IF (A) -50 0 50 100 150 TJ (°C)
Figure 11. Normalized V(BR)CES vs junction temperature Figure 12. Capacitance variations
V IGBT100820181016NVBR (BR)CES C IGBT080820181008CVR (Norm.) (pF) 1.08 C I IES C = 250 μA 10 3 1.04 1.00 10 2 0.96 COES CRES 0.92 10 1 -50 0 50 100 150 TJ (°C) 10 -1 10 0 10 1 10 2 VCE (V)
DS11801
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Rev 3 page 6/15
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 TO-247 long leads package information Revision history