Datasheet MMBT3906T (ON Semiconductor) - 4
| Производитель | ON Semiconductor |
| Описание | PNP Bipolar Transistor |
| Страниц / Страница | 7 / 4 — MMBT3906TT1. TYPICAL TRANSIENT CHARACTERISTICS. Figure 4. Capacitance. … |
| Версия | 3 |
| Формат / Размер файла | PDF / 97 Кб |
| Язык документа | английский |
MMBT3906TT1. TYPICAL TRANSIENT CHARACTERISTICS. Figure 4. Capacitance. Figure 5. Charge Data. Figure 6. Turn −On Time
51 предложений от 21 поставщиков Биполярный транзистор, PNP, 40 В, 0.2 А, 0,2 Вт |
| MMBT3906TT1G
Rochester Electronics | от 0.29 ₽ | |
| MMBT3906TT1G
ON Semiconductor | от 0.89 ₽ | |
| MMBT3906TT1G
ON Semiconductor | от 2.50 ₽ | |
| MMBT3906TT1G
ON Semiconductor | от 2.70 ₽ | |
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Текстовая версия документа
MMBT3906TT1 TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 5000 VCC = 40 V 7.0 3000 IC/IB = 10 2000 Q 5.0 T Cobo 1000 700 Cibo ANCE (pF) 3.0 500 ACIT Q, CHARGE (pC) 300 CAP 2.0 200 QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 4. Capacitance Figure 5. Charge Data
500 500 I 300 C/IB = 10 300 VCC = 40 V I 200 200 B1 = IB2 IC/IB = 20 100 100 70 70 t 50 r @ VCC = 3.0 V TIME (ns) 50 ALL I TIME (ns) 30 15 V 30 C/IB = 10 f 20 t , F 20 40 V 10 2.0 V 10 7 t 7 d @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 6. Turn −On Time Figure 7. Fall Time www.onsemi.com 4
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