Datasheet MMBT3904WT1, SMMBT3904WT1G, MMBT3906WT1, SMMBT3906WT1G (ON Semiconductor) - 3

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT MHz (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT3904WT1, SMMBT3904WT1 300 − (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) MMBT3906WT1, SMMBT3906WT1 250 − Output Capacitance Cobo pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1 − 4.0 (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3906WT1, SMMBT3906WT1 − 4.5 Input Capacitance Cibo pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1 − 8.0 (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3906WT1, SMMBT3906WT1 − 10.0 Input Impedance hie k W (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 1.0 10 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1 2.0 12 Voltage Feedback Ratio hre X 10− 4 (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 0.5 8.0 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1 0.1 10 Small − Signal Current Gain hfe − (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 100 400 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1 100 400 Output Admittance hoe mmhos (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 1.0 40 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1 3.0 60 Noise Figure NF dB (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 − 5.0 (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz) − 4.0 MMBT3906WT1, SMMBT3906WT1
SWITCHING CHARACTERISTICS Characteristic Condition Symbol Min Max Unit
Delay Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) td 35 ns MMBT3904WT1, SMMBT3904WT1 − 35 (V − CC = −3.0 Vdc, VBE = 0.5 Vdc) MMBT3906WT1, SMMBT3906WT1 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr 35 MMBT3904WT1, SMMBT3904WT1 − 35 (I − C = −10 mAdc, IB1 = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts 200 ns MMBT3904WT1, SMMBT3904WT1 − 225 (V − CC = −3.0 Vdc, IC = −10 mAdc) MMBT3906WT1, SMMBT3906WT1 Fall Time (IB1 = IB2 = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 tf − 50 (I − 75 B1 = IB2 = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1
www.onsemi.com 3