Datasheet MMBT3904WT1, SMMBT3904WT1G, MMBT3906WT1, SMMBT3906WT1G (ON Semiconductor) - 6
| Производитель | ON Semiconductor |
| Описание | NPN and PNP Bipolar Transistor |
| Страниц / Страница | 13 / 6 — MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,. SMMBT3906WT1G, … |
| Версия | 9 |
| Формат / Размер файла | PDF / 132 Кб |
| Язык документа | английский |
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,. SMMBT3906WT1G, PNP. MMBT3904WT1, SMMBT3904WT1. h PARAMETERS
58 предложений от 26 поставщиков TRANS NPN 40V 0.2A SOT323. Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 150mW Surface Mount SC-70-3 (SOT323). Transistors - Bipolar (BJT)... |
| MMBT3904WT1G
ON Semiconductor | от 2.75 ₽ | |
| MMBT3904WT1G
ON Semiconductor | от 3.96 ₽ | |
| MMBT3904WT1G
ON Semiconductor | от 5.23 ₽ | |
| MMBT3904WT1G
| по запросу | |
Модельный ряд для этого даташита
Текстовая версия документа
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 100 MMBT3904WT1 50 MMBT3904WT1 m 200 ANCE ( mhos) 20 GAIN 10 100 ADMITT 70 5 feh , CURRENT 50 h , OUTPUT oe 2 30 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. Current Gain Figure 10. Output Admittance
20 10 -4 7.0 10 MMBT3904WT1 MMBT3904WT1 5.0 5.0 TIO (X 10 ) 3.0 2.0 2.0 IMPEDANCE (k OHMS) 1.0 TAGE FEEDBACK RA 1.0 ie 0.5 h , INPUT 0.7 reh , VOL 0.2 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS
1000 VCE = 1 V TJ = 150°C GAIN 25°C -55°C 100 , DC CURRENT FEh MMBT3904WT1 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain www.onsemi.com 6
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