Datasheet MMBT3904WT1, SMMBT3904WT1G, MMBT3906WT1, SMMBT3906WT1G (ON Semiconductor) - 7

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1
TS) 1.0 T MMBT3904WT1 J = 25°C 0.8 TAGE (VOL IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 OR EMITTER VOL 0.2 CEV , COLLECT 00.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
0.9 1.4 I 0.8 I C/IB = 10 C/IB = 10 1.2 0.7 150°C AGE (V) 0.6 25°C AGE (V) 1.0 T T OR−EMITTER 0.5 −55°C 0.8 0.4 −55°C 25°C TION VOL , BASE−EMITTER TION VOL 0.3 0.6 , COLLECT sat) TURA BE( TURA 0.2 V 150°C SA SA 0.4 CE(sat)V 0.1 0 0.2 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 15. Collector Emitter Saturation Voltage Figure 16. Base Emitter Saturation Voltage vs. vs. Collector Current Collector Current
1.4 VCE = 1 V 1.2 AGE (V) T 1.0 −55°C 0.8 25°C 0.6 , BASE−EMITTER VOL 0.4 150°C on) BE(V 0.2 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A)
Figure 17. Base Emitter Voltage vs. Collector Current www.onsemi.com 7