Datasheet MMBT3904WT1, SMMBT3904WT1G, MMBT3906WT1, SMMBT3906WT1G (ON Semiconductor) - 8
Производитель | ON Semiconductor |
Описание | NPN and PNP Bipolar Transistor |
Страниц / Страница | 13 / 8 — MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,. SMMBT3906WT1G, … |
Версия | 9 |
Формат / Размер файла | PDF / 132 Кб |
Язык документа | английский |
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,. SMMBT3906WT1G, PNP. MMBT3904WT1, SMMBT3904WT1

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Текстовая версия документа
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1
TJ = 25°C TJ = 125°C 1.0 10 MMBT3904WT1 MMBT3904WT1 7.0 0.5 +25°C TO +125°C ° qVC FOR VCE(sat) 5.0 0 -55°C TO +25°C (mV/ C) ANCE (pF) Cibo -0.5 3.0 ACIT -55°C TO +25°C -1.0 CAP C COEFFICIENT 2.0 obo +25°C TO +125°C -1.5 qVB FOR VBE(sat) -2.0 1.0 0 20 40 60 80 100 120 140 160 180 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 IC, COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE (VOLTS)
Figure 18. Temperature Coefficients Figure 19. Capacitance
1000 1 100 mS 10 mS VCE = 1 V TA = 25°C 1 mS 1 S 0.1 100 OR CURRENT (A) Thermal Limit 0.01 PRODUCT (MHz) , COLLECT , CURRENT−GAIN−BANDWIDTH I C f T 10 0.001 0.1 1 10 100 1000 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 20. Current Gain Bandwidth Product Figure 21. Safe Operating Area vs. Collector Current www.onsemi.com 8