Datasheet MMBT3906 (NXP) - 4

NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 MHC459 MHC460 600 −250 handbook, halfpage handbook, halfpage IC h (mA) (3) (2) (1) FE −200 (1) (4) 400 (5) −150 (6) (7) (2) −100 (8) 200 (9) (3) −50 (10) 0 0 −10−1 −1 −10 −102 −103 0 −2 −4 −6 −8 −10 IC (mA) VCE (V) Tamb = 25 °C. (1) IB = −1.5 mA. (5) IB = −0.9 mA. (9) IB = −0.3 mA. VCE = −1 V. (2) IB = −1.35 mA. (6) IB = −0.75 mA. (10) IB = −0.15 mA. (1) Tamb = 150 °C. (3) IB = −1.2 mA. (7) IB = −0.6 mA. (2) Tamb = 25 °C. (4) IB = −1.05 mA. (8) IB = −0.45 mA. (3) Tamb = −55 °C. Fig.3 Collector current as a function of Fig.2 DC current gain; typical values. collector-emitter voltage. MHC461 MHC462 −1200 −1200 handbook, halfpage handbook, halfpage VBE VBEsat (mV) (mV) −1000 −1000 (1) (1) −800 −800 (2) (2) −600 −600 (3) (3) −400 −400 −200 −200 −10−1 −1 −10 −102 −103 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) VCE = −1 V. IC/IB = 10. (1) Tamb = −55 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. (3) Tamb = 150 °C. Fig.4 Base-emitter voltage as a function of Fig.5 Base-emitter saturation voltage as a collector current. function of collector current. 2003 Mar 18 4 Document Outline Features Applications Description Marking Pinning Quick reference data Limiting values Thermal characteristics Characteristics Package outline Data sheet status Disclaimers