Datasheet MMBT3906 (Nexperia) - 3

link to page 3 link to page 3
NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 FEATURES QUICK REFERENCE DATA
• Collector current capability IC = −200 mA
SYMBOL PARAMETER MAX. UNIT
• Collector-emitter voltage VCEO = −40 V. VCEO collector-emitter voltage −40 V IC collector current (DC) −200 mA
APPLICATIONS
• General switching and amplification.
PINNING PIN DESCRIPTION DESCRIPTION
1 base PNP switching transistor in a SOT23 plastic package. 2 emitter NPN complement: MMBT3904. 3 collector
MARKING
handbook, halfpage
TYPE NUMBER MARKING CODE
(1) 3 3 MMBT3906 7B∗
Note
1 1. ∗ = p: Made in Hong Kong. ∗ 2 = t: Made in Malaysia. 1 2 ∗ = W: Made in China. Top view MAM256 Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −200 mA ICM peak collector current − −200 mA IBM peak base current − −100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board. 2003 Mar 18 2 Document Outline Features Applications Description Marking Pinning Quick reference data Limiting values Thermal characteristics Characteristics Package outline Data sheet status Disclaimers