link to page 3 link to page 3 NXP SemiconductorsProduct data sheetPNP switching transistorMMBT3906FEATURESQUICK REFERENCE DATA • Collector current capability IC = −200 mA SYMBOLPARAMETERMAX.UNIT • Collector-emitter voltage VCEO = −40 V. VCEO collector-emitter voltage −40 V IC collector current (DC) −200 mA APPLICATIONS • General switching and amplification. PINNINGPINDESCRIPTIONDESCRIPTION 1 base PNP switching transistor in a SOT23 plastic package. 2 emitter NPN complement: MMBT3904. 3 collector MARKING handbook, halfpage TYPE NUMBERMARKING CODE (1) 3 3 MMBT3906 7B∗ Note 1 1. ∗ = p: Made in Hong Kong. ∗ 2 = t: Made in Malaysia. 1 2 ∗ = W: Made in China. Top view MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −200 mA ICM peak collector current − −200 mA IBM peak base current − −100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 2003 Mar 18 2 Document Outline Features Applications Description Marking Pinning Quick reference data Limiting values Thermal characteristics Characteristics Package outline Data sheet status Disclaimers
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