NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 − MHC463 103 handbook, halfpage VCEsat (mV) (1) −102 (2) (3) −10 −10−1 −1 −10 −102 −103 IC (mA) IC/IB = 10. (1) Tamb = 25 °C. (2) Tamb = 150 °C. (3) Tamb = −55 °C. Fig.6 Collector-emitter saturation voltage as a function of collector current. V V handbook, full pagewidth BB CC R R B C V (probe) o (probe) oscilloscope oscilloscope 450 Ω 450 Ω R2 Vi DUT R1 MGD624 Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = 1.9 V; VCC = −3 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.7 Test circuit for switching times. 2003 Mar 18 5 Document Outline Features Applications Description Marking Pinning Quick reference data Limiting values Thermal characteristics Characteristics Package outline Data sheet status Disclaimers
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