SMBT3906...MMBT3906PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904...MMBT3904 (NPN) • SMBT3906S/ U: for orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 TypeMarkingPin ConfigurationPackage SMBT3906/ MMBT3906 s2A 1=B 2=E 3=C - - - SOT23 SMBT3906S s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 SMBT3906U s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings ParameterSymbolValueUnit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 6 Collector current IC 200 mA Total power dissipation- Ptot mW TS ≤ 71°C, SOT23, MMBT3906 330 TS ≤ 115°C, SOT363, MMBT3906S 250 TS ≤ 107°C, SC74, MMBT3906U 330 Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 1 2012-08-21
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