Datasheet 2N3904 (Multicomp) - 2

2N3904 General Purpose Transistors NPN TO-92
Absolute Maximum Ratings Description Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 6.0 Collector Current Continuous IC 200 mA Power Dissipation at Ta = 25°C 625 mW Derate above 25°C 5.0 mW/°C PD Power Dissipation at Tc= 25°C 1.5 W Derate above 25°C 12 mW/°C Operating and Storage T JunctionTemperature Range j, Tstg -55 to +150 °C
Thermal Resistance
Junction to Case Rth (j-c) 83.3 °C/W Junction to Ambient Rth (j-a) 200
Electrical Characteristics (Ta = 25°C unless otherwise specified) Description Symbol Test Condition 2N3904 Unit
Collector-Emitter Voltage *VCEO IC = 10mA, IB = 0 >40 Collector-Base Voltage VCBO IC = 10µA, IE = 0 >60 V Emitter-Base Voltage VEBO IE = 10µA, IC = 0 >6.0 Collector-Cut off Current ICEX VCE = 30V, VEB = 3V <50 nA Base Current IBL IC = 0.1mA, VCE = 1V >40 IC = 1mA, VCE = 1V >70 DC Current Gain *hFE IC = 10mA, VCE = 1V 100 - 300 - I >60 C = 50mA, VCE = 1V I >30 C = 100mA, VCE = 1V <0.20 Collector Emitter Saturation Voltage *VCE (sat) IC = 10mA, IB = 1mA <0.30 V IC = 50mA, IB = 5mA 0.65 - 0.85 V Base Emitter Saturation Voltage *VBE (sat) <0.95 Page 2 12/05/08 V1.1