Datasheet BC847, BC547 (NXP) - 6

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NXP Semiconductors BC847/BC547 series 45 V, 100 mA NPN general-purpose transistors 7. Characteristics Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off VCB = 30 V; IE = 0 A - - 15 nA current VCB = 30 V; IE = 0 A; - - 5 µA Tj = 150 °C IEBO emitter-base cut-off VEB = 5 V; IC = 0 A - - 100 nA current hFE DC current gain hFE group A VCE = 5 V; IC = 10 µA - 90 - hFE group B VCE = 5 V; IC = 10 µA - 150 - hFE group C VCE = 5 V; IC = 10 µA - 270 - DC current gain VCE = 5 V; IC = 2 mA 110 - 800 hFE group A VCE = 5 V; IC = 2 mA 110 180 220 hFE group B VCE = 5 V; IC = 2 mA 200 290 450 hFE group C VCE = 5 V; IC = 2 mA 420 520 800 VCEsat collector-emitter IC = 10 mA; IB = 0.5 mA - 90 200 mV saturation voltage IC = 100 mA; IB = 5 mA [1] - 200 400 mV VBEsat base-emitter IC = 10 mA; IB = 0.5 mA [2] - 700 - mV saturation voltage IC = 100 mA; IB = 5 mA [2] - 900 - mV VBE base-emitter voltage IC = 2 mA; VCE = 5 V [2] 580 660 700 mV IC = 10 mA; VCE = 5 V - - 770 mV Cc collector capacitance IE = ie = 0 A; VCB = 10 V; - - 1.5 pF f = 1 MHz Ce emitter capacitance IC = ic = 0 A; VEB = 0.5 V; - 11 - pF f = 1 MHz fT transition frequency IC = 10 mA; VCE = 5 V; 100 - - MHz f = 100 MHz NF noise figure IC = 200 µA; VCE = 5 V; - 2 10 dB RS = 2 kΩ; f = 1 kHz; B = 200 Hz [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] VBE decreases by approximately 2 mV/K with increasing temperature. BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 07 — 10 December 2008 6 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Revision history 11. Legal information 11.1 Data sheet status 11.2 Definitions 11.3 Disclaimers 11.4 Trademarks 12. Contact information 13. Contents