HMC396 v02.0109 InGaP HBT GAIN BLOCKMMIC AMPLIFIER, DC - 8 GHzPad Descriptions 2 Pad Number Function Description Interface Schematic This pin is DC coupled. IP 1 RFIN An off chip DC blocking capacitor is required. H - C S 2 RFOUT RF output and DC Bias for the output stage. R IE Die GND Die bottom must be connected to RF/DC ground. IF Bottom L P M Application Circuit K A OC BL Note: IN 1. Select Rbias to achieve Icq using equation below, A Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. & G Icq = Vs - 3.9 R Rbias E IV R D Recommended Component Values Frequency (MHz) Component 50 1000 4000 8000 L1 270 nH 56 nH 8.2 nH 2.2 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 2 - 12 20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
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